808nm 1000mW IR Infrared Laser Diode TO‑18 5.6mm Package Without PD

• Output Power 1000mw 
  

• Wavelength 808nm 
  

• Working Voltage 2VDC 
  

• Working Current 1200mA
  

• Threshold current: 180mA
  

• Working Temperature -40 ℃~＋60 ℃
  

• Dimensions TO18 (5.6mm) 

Usage Instructions:

1. The laser emitted by a laser diode may cause injury to the human eye. When the diode is in operation, it is strictly prohibited to look directly at its output end.

2. The device requires an appropriate driving power supply; the instantaneous reverse current must not exceed 20 μA, and the reverse voltage must not exceed 2 V – otherwise, the device may be damaged. When connecting a laser diode to a power supply, the supply output voltage should be set to zero; when adjusting the current, it should be increased or decreased gradually to avoid damaging the device due to inrush current.

3. The device should be stored in a dry environment.

4. Operating at elevated temperatures increases the threshold current, reduces conversion efficiency, and accelerates device aging.

5. Operating at an output power exceeding the specified parameters will accelerate device aging.

6. The device requires adequate heat dissipation or operation under cooling conditions; it must be used in strict compliance with the product specification sheet to ensure its service life.

7. This product is an electrostatic-sensitive device; handle it only when the human body is properly grounded. For electrostatic discharge protection, use an anti-static wrist strap.

8. The laser's output wavelength is affected by the operating current and heat dissipation; therefore, it is essential to maintain proper cooling conditions to reduce the chip temperature during operation.

Package: 

1X 5.6mm 1000mW 808nm Infrared IR Laser Diode No PD