400-1100nm 1.2mm Silicon PIN Photodetector Diode High Responsivity LowDark Curre

400-1100nm 1.2mm Silicon PIN Photodetector Diode High Responsivity LowDark Current

Specification:

Photosensitive surface area: 1.2m × 1.2mm

Response wavelength: 400-1100nm

Dark current: 0.2nA@-5V

Rise time: 1.4ns@-5V, 50Ω

Responsiveness: 0.2mA/mW@1064nm

                           0.5mA/mW@850nm

                           0.35mA/mW@650nm

Application:

1. Optical sensor 2. Optical power meter 3. Industrial automation control 4. Scientific analysis and experiment 5. Space light detection equipment 6. Response spectrum test

Features:

High reliability, low dark current; photosensitive surface diameter 1.2x 1.2mm, TO5 package, optical interface optional.

Package:

1*400-1100nm 1.2mm Silicon PIN Photodetector Diode High Responsivity LowDark Current