400-1100nm 3.2mm Silicon Photodetector/Diode 2 Pins

400-1100nm 3.2mm Silicon Photodetector/Diode

Photosensitive surface area:

3.2m × 3.2mm

Response wavelength:

400-1100nm

Dark current:

0.2nA@-5V

Rise time:

1.4ns@-5V, 50Ω

Responsiveness:

0.2mA/mW@1064nm

0.5mA/mW@850nm

0.35mA/mW@650nm

Application:

1. Optical sensor 2. Optical power meter 3. Industrial automation control 4. Scientific analysis and experiment 5. Space light detection equipment 6. Response spectrum test

Features:

High reliability, low dark current; photosensitive surface diameter 3.2x 3.2mm, TO5 package, optical interface optional.

Package:

1*400-1100nm 3.2mm Silicon Photodetector/Diode