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845nm 450mW CW Infrared Laser Diode QL84S6SL 5.6mm TO Package L-Type PD Monitor Laser for 3D Sensing Gesture Recognition
845nm 450mW CW Infrared Laser Diode QL84S6SL 5.6mm TO Package L-Type PD Monitor Laser for 3D Sensing Gesture Recognition
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Product Name: QL84S6SL 845nm 450mW Infrared CW Laser Diode
Core Spec Overview
Model: QL84S6SLCentral
Wavelength: 845 nm
Rated Optical Output Power: 450 mW (CW Continuous Wave)
Package Form: Standard 5.6mm TO Metal Package
Internal Structure: with integrated PD (photodiode power monitor)
Primary Application: 3D sensing, gesture recognition equipment, industrial infrared laser modules
1. Key Product Features
✅ Standard 845nm near-infrared wavelength, stable multi-transverse TE mode laser output
✅ Continuous wave (CW) working mode, rated stable output power up to 450mW
✅ Built-in monitoring photodiode (PD pin), convenient for APC automatic power control circuit design
✅ 5.6mm TO sealed metal package, excellent heat dissipation performance
✅ Fixed TE polarization rate up to 90%, consistent beam quality
✅ Clear beam divergence parameters for easy optical path matching design
2. Absolute Maximum Ratings (Do not exceed these values)
| Parameter | Rating | Unit | Remarks |
|---|---|---|---|
| Rated Optical Power | 450 | mW | Continuous working |
| Peak Pulse Power | 800 | mW | Pulse width ≤1μs, Duty Cycle ≤50% |
| Laser Diode Reverse Voltage | ≤2 | V | - |
| Operating Temperature Range | -10 ~ +65 | ℃ | Case temperature |
| Storage Temperature Range | -40 ~ +85 | ℃ | - |
3. Electrical & Optical Parameters (Test Condition: Case Temperature Tc=25℃, Po=450mW)
| Item | Min | Typical | Max | Unit |
|---|---|---|---|---|
| Threshold Current (Ith) | 70 | 110 | 130 | mA |
| Operating Current (Iop) | 450 | 510 | 525 | mA |
| Operating Voltage (Vop) | 1.9 | 2.1 | 2.25 | V |
| Series Resistance (Rs) | — | 350 | — | mΩ |
| Slope Efficiency | 0.95 | 1.15 | 1.30 | mW/mA |
| Electro-Optical Conversion Efficiency | — | 42 | — | % |
| Emission Wavelength | 835 | 845 | 855 | nm |
| Spectral Linewidth | — | 2 | — | nm |
| Horizontal Beam Divergence (FWHM) | 5 | 9 | 12 | deg |
| Vertical Beam Divergence (FWHM) | 30 | 40 | 45 | deg |
| Wavelength Temperature Coefficient | — | 0.26 | — | nm/℃ |
| Optical Power Temperature Coefficient | — | -0.22 | — | %/℃ |
| TE Polarization Ratio | — | 90 | — | % |
4. Pin Definition (Bottom View, L-type internal circuit)
LD: Laser Diode Anode
COMMON: Common Cathode (LD + PD common pin)
PD: Monitor Photodiode Anode
5. Application Scenarios
▸ 3D structured light sensing modules
▸ Gesture recognition & human-machine interaction equipment
▸ Industrial infrared ranging, optical detection equipment
▸ Custom laser emission light source development
Important Usage Notes
This laser diode must be used with an APC constant power drive circuit plus matched heat sink; long-time working temperature should not exceed 60℃ under 450mW output.
Excessive current or reverse voltage will permanently damage the laser chip, strictly follow the datasheet limit parameters for circuit design.
Product specifications are subject to manufacturer update without prior notice.
Class laser product, please take corresponding laser safety protection during operation.
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